Si-Doped InAs/GaAs Quantum-Dot Solar Cell With AlAs Cap Layers

Improvement of performance of InAs quantum dot solar cell by inserting thin AlAs layers

A new measure to enhance the performance of InAs quantum dot solar cell is proposed and measured. One monolayer AlAs is deposited on top of InAs quantum dots (QDs) in multistack solar cells. The devices were fabricated by molecular beam epitaxy. In situ annealing was intended to tune the QD density. A set of four samples were compared: InAs QDs without in situ annealing with and without AlAs ca...

Improving Si solar cell performance using Mn:ZnSe quantum dot-doped PLMA thin film

Poly(lauryl methacrylate) (PLMA) thin film doped with Mn:ZnSe quantum dots (QDs) was spin-deposited on the front surface of Si solar cell for enhancing the solar cell efficiency via photoluminescence (PL) conversion. Significant solar cell efficiency enhancements (approximately 5% to 10%) under all-solar-spectrum (AM0) condition were observed after QD-doped PLMA coatings. Furthermore, the real ...

Towards Silicon Quantum Dot Solar Cells: Comparing Morphological Properties and Conduction Phenomena in Si Quantum Dot Single Layers and Multilayers

Quantum confined silicon, in the form of silicon quantum dots of diameters 5 nm or less, has the property of bandgap control and light emission. This bandgap engineering gives silicon quantum dots applications in novel photovoltaic devices, while maintaining compatibility with existing silicon technologies. These dots can help reduce lattice thermalisation losses in a single-junction solar cell...

[Article] Physics-Based Modeling and Experimental Study of Si-Doped InAs/GaAs Quantum Dot Solar Cells

Enhanced Performance in Quantum Dot Solar Cell with TiOx and N2 Doped TiOx Interlayers by